Energy Transport Systems for Semiconductors: Analysis and Simulation

By: Joseph W. Jerome and Chi-Wang Shu

Moment models of carrier transport, derived from the Boltzmann equation, have made possible the simulation of certain key effects through such realistic global assumptions as energy dependent mobility functions. Some of these effects are not discerned via classical drift-diffusion models, which are primarily local in nature. In this paper, analysis and simulation of an energy transport model, the ET model, will be presented. This model, intermediate between the hydrodynamic and drift-diffusion models, was developed at the University of Illinois. The algorithms employed are the essentially non-oscillatory shock capturing algorithms. Mathematical results will be presented as well, for the one dimensional steady state model. Informative comparisons with the hydrodynamic model will be presented. One carrier transport is studied.
This paper appeared in Proceedings of the First World Congress of Nonlinear Analysts (V. Lakshmikantham, editor), Walter de Gruyter Publishing, Berlin (1996), 3835--3846.
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